Triode/MOS tube/transistor/module
Číslo dílu
onsemi (Ansemi)
Výrobci
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Popis
80737 PCS
Na skladě