Triode/MOS tube/transistor/module

Automotive Power MOSFET, 30V, 2.1A, 100mΩ, Single N-Channel, SOT-23. The RDS(on) of these small surface-mount MOSFETs ensures minimal power loss and energy savings, making them suitable for use in space-sensitive power management circuits.

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.