Triode/MOS tube/transistor/module

IGBT module

Vce=1200V, Ic=43A, Vce(sat)=2.1V

Power MOSFETs for compact and efficient designs with 5x6mm flat lead encapsulation and high thermal performance.

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is specifically designed to minimize conduction losses, provide superior switching performance and higher avalanche energy, and can withstand extreme dv/dt rates. Therefore, SuperFET II MOSFETs are suitable for various AC/DC power conversions, enabling system miniaturization and higher energy efficiency.