Triode/MOS tube/transistor/module

IGBT module

IGBT module

Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.