Triode/MOS tube/transistor/module

IGBT module

Utilizes new field stop 4th generation IGBT technology and is AEC-Q101 qualified. The AFGB30T65SQDN offers optimum performance with low conduction and switching losses for efficient operation in various applications.

Automotive power MOSFETs for compact and energy efficient designs with 5x6mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology enables the lowest on-resistance per silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.