Triode/MOS tube/transistor/module

IGBT module

The FDMS0306AS is suitable for minimizing losses in power conversion applications. Combining developments in silicon and encapsulation technology, it provides the lowest rDS(on) while maintaining excellent switching performance. This device also adds the advantage of a highly efficient monolithic Schottky body diode.

This N-channel MOSFET features Fairchild's PowerTrench