Triode/MOS tube/transistor/module
Číslo dílu
onsemi (Ansemi)
Výrobci
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Popis
89412 PCS
Na skladě