Triode/MOS tube/transistor/module

PNP, Vceo=-300V, Ic=-100mA

BC857AW-F2-0000HF

This high voltage PNP bipolar transistor is suitable for general switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

Double N-channel 20V 7A

PNP, high current 1.5A, silk screen Y2, hfe=160～400

MOSFET 2N-CH

N-channel, 55V, 30A, 14.7mΩ@10V

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Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 6A Power (Pd): 1.4W On-resistance (RDS(on)