Triode/MOS tube/transistor/module

This single N-channel MOSFET is designed using an advanced Power Trench process to optimize rDS(ON) @ VGS = 1.5 V based on a custom MicroFET lead frame. This design is similar to the FDMA410NZ, but it uses our advanced new 0.55mm (maximum) 2x2 MLP encapsulation.

60V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150