Triode/MOS tube/transistor/module

IGBT module

IGBT module

The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed using ON Semiconductor's EcoSPARK 2 technology, which helps eliminate external protection circuits. Suitable for driving coils in the harsh environment of automotive ignition systems, this technology also provides excellent Vsat and SCIS energy capabilities at higher operating temperatures. The logic level gate inputs are ESD protected and have an integrated gate resistor. An integrated Zener circuit limits the IGBT's collector-emitter voltage to 450 V, enabling systems requiring higher spark voltages.

Power MOSFET, 40 V, 3.7 mΩ, 87 A, single N-channel