Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

IGBT module

The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed using ON Semiconductor's EcoSPARK 2 technology, which helps eliminate external protection circuits. Suitable for driving coils in the harsh environment of automotive ignition systems, this technology also provides excellent Vsat and SCIS energy capabilities at higher operating temperatures. The logic level gate inputs are ESD protected and have an integrated gate resistor. An integrated Zener circuit limits the IGBT's collector-emitter voltage to 450 V, enabling systems requiring higher spark voltages.