Triode/MOS tube/transistor/module

The FSB50250B/BS is a Motion SPM 5 module providing a fully featured, high performance inverter output stage for AC direct sense, BLDC and PMSM motors. These modules integrate optimized gate drive for built-in MOSFETs (FRFET technology) to minimize EMI and losses, while also providing several on-module protection features including undervoltage lockout and temperature monitoring. Requiring only one supply voltage, the built-in high-speed HVIC converts incoming logic-level gate inputs into the high-voltage, high-current drive signals required to properly drive the module's internal MOSFETs. Separate open source MOSFET terminals are provided for each phase to support the widest range of control algorithms.

IGBT module

Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .

The NTMFS4C024N is a 30 V, 78 A, single N-channel power MOSFET.

SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs utilizing charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.