Triode/MOS tube/transistor/module

The 2SC5226A is an RF transistor, 10 V, 70 mA, fT = 7 GHz, NPN single MCP, for VHF to UHF broadband low noise amplifier applications.

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

The FSB50825AS is an advanced Motion SPM 5 series based on Fast Recovery MOSFET (FRFET) technology and can be used as a compact inverter solution for low power motor drive applications such as fans and pumps. The FSB50825AS contains six FRFET MOSFETs, three half-bridge gate driver HVICs with temperature sensing, and three bootstrap diodes in a fully isolated compact encapsulation for optimum thermal performance. The FSB50825AS has low electromagnetic interference (EMI) characteristics due to optimized switching speed and reduced parasitic inductance. Because FSB50825AS uses MOSFETs as power switches, it is much more robust and has a larger safe operating area (SOA) than IGBT-based power modules. The FSB50825AS solution is suitable for compact and reliable inverter designs where assembly space is limited.