Triode/MOS tube/transistor/module

N-channel 650V 4A

N-channel 60V 260mA

This Darlington bipolar power transistor is suitable for general-purpose amplifier and switching applications where isolation of the device mounting surface from a heat sink or chassis is required.

P-channel, -30V, -2.6A, 115mΩ@-10V

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -23.5 VGS(th)(v) -1.65 RDS(ON)(m?)@4.428V 50 Qg(nC) @4.5V 45 QgS(nC) 8 Qgd(nC) 10 Ciss(pF) 2980 Coss(pF) 245 Crss(pF) 155

PNP

P-channel, 20V, 2.5A, 100mΩ@4.5V

N-channel, 20V, 25A

N channel

PNP, Vceo=-30V, Ic=-500mA, hfe=177~250

P-channel, 55V, 15A.