Triode/MOS tube/transistor/module

The FSB50825AS is an advanced Motion SPM 5 series based on Fast Recovery MOSFET (FRFET) technology and can be used as a compact inverter solution for low power motor drive applications such as fans and pumps. The FSB50825AS contains six FRFET MOSFETs, three half-bridge gate driver HVICs with temperature sensing, and three bootstrap diodes in a fully isolated compact encapsulation for optimum thermal performance. The FSB50825AS has low electromagnetic interference (EMI) characteristics due to optimized switching speed and reduced parasitic inductance. Because FSB50825AS uses MOSFETs as power switches, it is much more robust and has a larger safe operating area (SOA) than IGBT-based power modules. The FSB50825AS solution is suitable for compact and reliable inverter designs where assembly space is limited.

IGBT module

The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed using ON Semiconductor's EcoSPARK 2 technology, which helps eliminate external protection circuits. Suitable for driving coils in the harsh environment of automotive ignition systems, this technology also provides excellent Vsat and SCIS energy capabilities at higher operating temperatures. The logic level gate inputs are ESD protected and have an integrated gate resistor. An integrated Zener circuit limits the IGBT's collector-emitter voltage to 450 V, enabling systems requiring higher spark voltages.

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

The FDMS0310AS is suitable for minimizing losses in power conversion applications. Simultaneously combined developments in silicon and encapsulation technology provide the lowest rDS(on) while maintaining excellent switching performance. This device also adds the advantage of a highly efficient monolithic Schottky body diode.