Triode/MOS tube/transistor/module

Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining the best soft body diode in the industry.

The ECH8667 is a P-channel power MOSFET, -30V, -5.5A, 39mΩ, dual ECH8, for general switching applications.

Utilizing a proprietary high-density trench MOSFET process, the part is designed for a low rDS(on) and low Qg form factor with avalanche ruggedness suitable for a wide variety of switching applications.

This N-channel MOSFET is produced using the PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

Automotive Power MOSFETs for compact and efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.