Triode/MOS tube/transistor/module

Semiconductor transistor field effect transistor MOS tube, TO-252-4L, N+P channel, withstand voltage: 60V/-60A, current: 13A/-13A, 10V internal resistance (Max): 0.055Ω/0.095Ω, 4.5V Internal resistance (Max): 0.066Ω/0.105Ω, power: 27W

N-channel, 30V, 62A, 4.8mΩ@10V

PNP, Vceo=-60V, Ic=-600mA

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 100mA Power (Pd): 200mW NPN, Vceo=45V, Ic=100mA

NPN, Vceo=60V, Ic=6A

Field effect transistor (MOSFET) N+P channel, N: VDSS withstand voltage 30V, ID current 16A, RDON on-resistance 20mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5 V, P: VDSS withstand Voltage 30V, ID current 14A, RDON on-resistance 30mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.5V,

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 60V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@150mA, 2V Characteristic frequency (fT): 100MHz

Maximum input voltage (V) 30 Voltage between collector and emitter (V) 50 Collector current peak value (mA) 500 Total emitter current (mA) 500 Working temperature -20～+80 Function description Seven-way Darling Darlington transistors array drive circuit Seven-way Darlington transistors array drive circuit Applications Relay driver, lamp driver, display driver Relay driver, lamp driver, display driver

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P+P channel, -30V, -6.6A, 32mΩ@10V