Triode/MOS tube/transistor/module

IGBT module

Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .

MOSFET, small signal, 500 mA, 60 V

Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.