Triode/MOS tube/transistor/module

IGBT module

This ADF IGBT series employs Field Stop Trench Generation 3 IGBTs, which offer extremely low saturation voltage and faster switching characteristics for superior energy efficiency. This technology is fully optimized for various PFC (Power Factor Correction) topologies; single boost, multi-channel interleaved, etc., with switching performance over 20KHz. TO3P encapsulation provides ultra-low thermal resistance for wider SOA, ensuring system stability.

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

These P-channel 2.5V specified MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for portable electronics applications: load switching and power management, battery charging and protection circuits.