Triode/MOS tube/transistor/module

Dual PNP, Vceo=-50V, Ic=-150mA

Semiconductor Transistor Field Effect Transistor MOS tube, TO-220, N channel, withstand voltage: 60V, current: 70A, 10V internal resistance (Max): 0.009Ω, power: 150W

Type P VDSS(V) 40 VGS(V) 20 VTH(V) 0.8 IDS47°C(A) 3.5 RDS(Max) 105 PD47°C(W) 1.25

This N-channel MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance.

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This P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.