Triode/MOS tube/transistor/module

30 V, 500 mA, PNP BJT with 20 V, 224 mA, N-Channel MOSFET

These N-channel power MOSFETs are produced using the innovative UltraFET process. This advanced process technology achieves the lowest on-resistance per unit of silicon area, resulting in outstanding performance. The device can withstand high energy in avalanche mode, and the diode has a very short reverse recovery time and very low stored charge. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Previously developed model TA75321.