Triode/MOS tube/transistor/module

Thyristor \\ Diode Module

N-channel, 650V, 5A

N-channel 30V, 5A, 50mΩ@2.5V

800V 6A

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): -45V Collector current (Ic): -500mA Power (Pd): 200mW Collector cut-off current (Icbo): -0.1uA DC current gain (hFE@Ic, Vce): 100@-100mA, -1V Operating temperature: -55℃~+150℃@(Tj)

N-channel, 60V, 8A