Triode/MOS tube/transistor/module

N-CH 60V 16.5A

Ultra high voltage MOS tube

PNP -150V -600mA

PNP, Vceo=-50V, Ic=-150mA, hfe=25~700

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

This 3.0 A, 100 V, PNP bipolar power transistor is suitable for general purpose amplifier and switching applications. The BD241C (NPN), BD242B (PNP), and BD242C (PNP) are complementary devices.