Triode/MOS tube/transistor/module
NPN, Vceo=80V, Ic=8A
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MICROCHIP (US Microchip)
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Infineon (Infineon)
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N-channel, 100V, 192A, 4.2mΩ@10V
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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ISC (Wuxi Solid Electric)
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CJ (Jiangsu Changdian/Changjing)
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JSMSEMI (Jiesheng Micro)
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Cmos (Guangdong Field Effect Semiconductor)
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MOS, DFN-8 5*6, P-channel, -40V, -90A, 5.3mΩ (Max), 135W
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CJ (Jiangsu Changdian/Changjing)
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YFW (You Feng Wei)
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LRC (Leshan Radio)
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SPTECH (Shenzhen Quality Super)
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PNP 130W -180V -12A Application field: Application · Power amplifier application · Recommended for 80W high-fidelity audio amplifier output stage application
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