Triode/MOS tube/transistor/module

PNP, Vceo=-80V, Ic=-0.7A, hfe=180~390

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

TRANS NPN 40V 0.6A

NPN+PNP

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.

Low VCE(sat) bipolar transistors are miniature surface mount devices with ultra-low saturation voltage VCE(sat) and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control.

N-channel, 200V, 10A, 0.3Ω@10V

N-channel 40V 72A, 4.8mΩ on-resistance