Triode/MOS tube/transistor/module

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

N-channel, 30V, 7.3A (Ta)

ON Semiconductor's new Field Stop Gen 4 IGBT series features a new field stop IGBT technology that provides optimal performance.

Type N VDSS(V) 100 ID@TC=84?C(A) 0.15 PD@TC=84?C(W) 0.25 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.64V -

Type: P-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 4.2A Power (Pd): 1.2W On-resistance (RDS(on)@Vgs,Id): 55mΩ@10V, 4.2A

The RDS(on) of these small surface-mount MOSFETs ensures minimal power loss and energy savings, making them suitable for use in space-sensitive power management circuits. Typical applications are DC-DC converters and power management in portable and battery-operated products such as computers, printers, PCMCIA cards, cellular and cordless phones.

N-channel, 350V, 11A

MOS tube type: N-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 300mA Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 2.2Ω@10V, 300mA