Triode/MOS tube/transistor/module

BC817-16W-F2-0000HF

YJG60G10A-F1-0100HF

Automotive power MOSFETs. This dual N-channel device uses small footprint encapsulation (2x2 mm) and ON Semiconductor's leading planar process to reduce footprint and improve energy efficiency. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.

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Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 15V Collector Current (Ic): 50mA Power (Pd): 200mW DC Current Gain (hFE@Ic,Vce): 100@1mA,5V

N-channel, 800V, 4.3A, 1.9Ω@10V

IC(A) 0.5 VCEO(V) 60 hFE(β) 100-400 fT(MHZ) 100 VCBO(V) 60 VCE(sat)(W) 0.25 Type NPN