Triode/MOS tube/transistor/module

N-channel, 500V, 0.26?@10V, 20A

Silicon carbide MOS, high frequency and high power applications, low loss

These N-channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary high cell density DMOS technology. This very high-density process is uniquely suited to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are especially suitable for low-voltage applications requiring fast switching, low in-line power loss, and transient protection, such as DC motor control and DC/DC conversion.

N-channel 55V 3.1A