Triode/MOS tube/transistor/module
This N-channel enhancement mode power MOSFET is produced using a planar stripe and DMOS proprietary process. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Popis
LONTEN (Longteng Semiconductor)
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MSKSEMI (Mesenco)
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Cmos (Guangdong Field Effect Semiconductor)
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MOS tube, TO-252, N channel, withstand voltage: 20V, current: 80A
Popis
BL (Shanghai Belling)
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CBI (Creation Foundation)
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SINO-IC (Coslight Core)
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This N-Channel Enhancement Mode Power MOSFET is produced using ON Semiconductor's planar stripe and DMOS proprietary processes. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for use in switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Popis
HXY MOSFET (Huaxuanyang Electronics)
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Cmos (Guangdong Field Effect Semiconductor)
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Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 40V, current: 60A, 10V internal resistance (Max): 0.01Ω, power: 50W
Popis
HUAYI (Hua Yi Wei)
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Slkor (Sakor Micro)
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Infineon (Infineon)
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