Triode/MOS tube/transistor/module
HUASHUO (Huashuo)
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Ruichips (Ruijun Semiconductor)
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CBI (Creation Foundation)
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TECH PUBLIC (Taizhou)
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BORN (Born Semiconductor)
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transistors,NPN 25V 500mA 300mW,SOT-23
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SINO-IC (Coslight Core)
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YFW (You Feng Wei)
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Produced using PowerTrench's proprietary technology, this N-channel MOSFET offers low rDS(on) and optimized BVDSS capability, bringing significant performance benefits to the application.
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CJ (Jiangsu Changdian/Changjing)
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NPN, Vceo=160V, Ic=600mA, hfe=200~300
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DIODES (US and Taiwan)
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N-channel, 20V, 4.1A
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SPS (American source core)
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LONTEN (Longteng Semiconductor)
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MOSFET Type P Drain-Source Voltage (Vdss) (V) -40 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 27/33 Continuous Drain Current ID (A) 24
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Infineon (Infineon)
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