Triode/MOS tube/transistor/module

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS processes. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

N-channel, 30V, 0.1A, 3.6Ω@4V

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 53A Power (Pd): 27W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 15nC@10V Input capacitance (Ciss@Vds): 0.63nF@15V Operating temperature: -55℃~+150℃@(Tj ) DFN3*3encapsulation;

Type: P-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 114A Power (Pd): 135W On-Resistance (RDS(on)@Vgs,Id): 4.6mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 106nC@10V Input Capacitance (Ciss@Vds): 5.7nF@20V Operating Temperature: -55℃~+150℃@(Tj )

N channel