Triode/MOS tube/transistor/module

N-channel, 80V

NPN

N-channel, 75V, 100A, 4.2mΩ@10V

Automotive Power MOSFETs for compact and efficient designs with 8x8mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs and Production Part Approval Process (PPAP) compliant for automotive applications.

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)