Triode/MOS tube/transistor/module

This device is specifically designed for battery charging or load switching in cell phones and other ultra-portable applications. It features a MOSFET with low on-resistance and zener diode protection against ESD. MicroFET 2x2 encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.

NPN

N-channel, 20V, 3.2A

N-Channel 100V 0.4A 1.0W

2SA2202 is a bipolar transistor, -100V, -2A, saturation voltage max -240mV, PNP single PCP.

N-channel, 100V, 3.1A, 126mΩ@10V

Type N VDSS(V) 30 ID@TC=57?C(A) 5 PD@TC=57?C(W) 1.4 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.37V 45

HFE:100-300

P-channel, 100V, 15A, 200mΩ@10V