Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 36 VGS(th)(v) 1.6 RDS(ON)(m?)@4.211V 19 Qg(nC)@4.5V QgS(nC) 6.4 Qgd(nC) 9.6 Ciss(pF) 2100 Coss(pF) 140 Crss(pF) 100

NPN,Vceo=45V,Ic=100mA

Type: P-Channel Drain-Source Voltage (Vdss): -20V Continuous Drain Current (Id): -30A On-Resistance (RDS(on)@Vgs,Id): 10mΩ@4.5V, 13mΩ@2.5V, Threshold Voltage (Vgs(th)@Id): -0.4V to -1.0V@250uA

40V N-Channel MOSFETs