Triode/MOS tube/transistor/module

MOSFET P-CH

CSD17308Q3 30V, N-Channel NexFET MOSFET™, Single SON3x3, 11.8mΩ

HFE: 200-350

NPN,Vceo=40V,Ic=600mA

MOSFET Type N Drain-Source Voltage (Vdss) (V) 20 Threshold Voltage VGS ±10 Vth(V) 0.3-1 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 2.8

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 15.2 On-Resistance (mΩ) 6 Input Capacitance (Ciss) 750 Reverse Transfer Capacitance Crss (pF) 37 Gate Charge (Qg ) 12

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -13.5 VGS(th)(v) -1.75 RDS(ON)(m?)@4.425V 100 Qg(nC) @4.5V 12.4 QgS(nC) 2.2 Qgd(nC) 6.3 Ciss(pF) 1137 Coss(pF) 76 Crss(pF) 50