Triode/MOS tube/transistor/module

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Double P groove 30V 3A

N-channel, 500V, 4.5A, 950mΩ@10V

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 11V Collector Current (Ic): 50mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 50nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@10mA, 5mA DC current gain (hFE@Ic,Vce): 82@5mA, 10V Characteristic frequency (fT): 3.2GHz Operating temperature: +150℃@(Tj)

N-channel 30V 10.5A