Triode/MOS tube/transistor/module
Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 4.1A Power (Pd): 1.4W On-Resistance (RDS(on)@Vgs,Id): 60Ω@10V, 2.8A Threshold voltage (Vgs(th)@Id): 1.2V@250μA
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DIODES (US and Taiwan)
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SILAN (Silan Micro)
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N-channel, 800V, 7A, 1.55Ω@10V
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HXY MOSFET (Huaxuanyang Electronics)
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Samwin (Semipower)
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LRC (Leshan Radio)
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LRC (Leshan Radio)
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DIODES (US and Taiwan)
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Infineon (Infineon)
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DIODES (US and Taiwan)
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YFW (You Feng Wei)
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JSMSEMI (Jiesheng Micro)
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This family of digital transistors is intended to replace a device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.
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Cmos (Guangdong Field Effect Semiconductor)
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TECH PUBLIC (Taizhou)
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ST (STMicroelectronics)
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