Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 120 VGS(th)(v) 1.8 RDS(ON)(m?)@4.206V 2.5 Qg(nC)@4.5V - QgS(nC) 12 Qgd(nC) 15.5 Ciss(pF) 4350 Coss(pF) 690 Crss(pF) 370

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 125@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)

Configuration Single Type N-Ch VDS(V) 150 VGS(V) 20 ID(A)Max. 150 VGS(th)(v) 2.9 RDS(ON)(m?)@4.501V - Qg(nC)@4.5V - QgS(nC) 18 Qgd(nC) 10 Ciss(pF) 5240 Coss(pF) 412 Crss(pF) 30

BC856BW-F2-0000HF

NPN, Vceo=300V, Ic=300mA

N-channel 650V 20A

This NPN bipolar transistor is suitable for general purpose amplifier and switching applications. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.