Triode/MOS tube/transistor/module

P-channel, -100V, -6.6A, 480mΩ@-10V

NPN, Vceo=25V, Ic=1.5A, hfe=160~300

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -25V Collector Current (Ic): -500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE( sat)@Ic,Ib): 600mV@500mA HFE: 200-350

Configuration Single Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -50 VGS(th)(v) - RDS(ON)(m?)@4.172V 9 Qg(nC)@ 4.5V 25 QgS(nC) 1.6 Qgd(nC) 11 Ciss(pF) 1620 Coss(pF) 320 Crss(pF) 290