Triode/MOS tube/transistor/module

BSS84W-F2-0000HF

NPN Vceo=30V Ic=0.5A PC=0.625W

HFE:100-300

Type: one N-channel one P-channel Drain-source voltage (Vdss): 60V Continuous drain current (Id): 6.8A/-5.7A Power (Pd): 3.5W On-resistance (RDS(on)@Vgs, Id): 27mΩ@10V,6A; 53mΩ@-10V,-15A Threshold voltage (Vgs(th)@Id): 1.6V@250uA;-1.7V@250uA Gate charge (Qg@Vgs): 19nC@10V; 25nC@-10V Input capacitance (Ciss@Vds): 0.916nF@30V; 1.2nF@-30V Operating temperature: -55℃~+150℃@(Tj)

VCES(V) 650 Ic@TC=100℃(A) 40 PD@TC=25?C(W) 375 VF Typ.@TC=25?C(V) 1.3 VCE(sat)(V)@TC=25 ?C 1.95

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 30A Power (Pd): 25W On-Resistance (RDS(on)@Vgs,Id): 6.5mΩ@10V,30A Threshold Voltage (Vgs(th)@Id): 1.5V@250uA Nch, 30V, 30A, 6.5mΩ@10V

Type N VDSS(V) 100 VGS(V) 20 VTH(V) 1 IDS95°C(A) 16 RDS(Max) 160 PD95°C(W) 79

P-channel, -60V, -1.6A, 250mΩ@-10V