Triode/MOS tube/transistor/module
UMW (Friends Taiwan Semiconductor)
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Seven-way high withstand voltage and high current Darlington drive circuit 50V 500mA
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CJ (Jiangsu Changdian/Changjing)
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FUXINSEMI (Fuxin Senmei)
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This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.
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ST (STMicroelectronics)
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NCE (Wuxi New Clean Energy)
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N-channel, 40V, 9A, 16 milliohms,
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Potens (Bosheng Semiconductor)
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CBI (Creation Foundation)
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Cmos (Guangdong Field Effect Semiconductor)
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Semiconductor Transistor Field Effect Transistor MOS tube, SOP-8, N channel, withstand voltage: 30V, current: 13A, 10V internal resistance (Max): 0.0068Ω, 4.5V internal resistance (Max): 0.012Ω, power: 2W
Popis
Automotive power MOSFETs for compact and energy efficient designs with 3x3mm flat lead encapsulation and high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
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HUAYI (Hua Yi Wei)
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These devices feature high current gain and low saturation voltage with up to 3 A of continuous collector current.
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TI (Texas Instruments)
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