Triode/MOS tube/transistor/module

-

P-channel, -20V, -10A, 13mΩ@-10V

NPN

Field Effect Transistor (MOSFET) Type: N-channel Drain-Source Voltage (Vdss): 150V Continuous Drain Current (Id): 180A Power (Pd): 300W On-resistance (RDS(on)@Vgs,Id: 5.6mΩ@ 10V, 20A Threshold Voltage (Vgs(th)@Id): 2.9@250uA Gate Charge (Qg@Vgs) 72nC@10V Input Capacitance (Ciss@Vds): 5.240nF@75V , Vds=150v Id=180A Rds=5.6 mΩ, working temperature: -55℃~+150℃@(Tj)

N-channel, Vce=1200V, Ic=6A, Vce(sat)=2.8V

N-channel, 30V, 100A, 3mΩ@10V