Triode/MOS tube/transistor/module

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Body type: NPN Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 500mA Power (Pd): 300mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 160@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: -65℃~+150℃@(Tj)

Dual N-channel, 20V, 220mA

N-channel, 100V, 63A, 14mΩ@10V

Polarity NPN Dissipated Power (W) 0.3 Maximum Collector Current (mA) 1500 Collector- Base Voltage (V) 40 Saturation Voltage Drop (V) 0.5 Collector/ Base Current (mA) 800/80 Maximum operating frequency (MHz) 100