Triode/MOS tube/transistor/module

Type N VDSS(V) 20 ID@TC=38?C(A) 5 PD@TC=38?C(W) 1.25 VGS(V) ±8 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.18V 25

Type(N)/ESD(N)/VDS60(V)/VGS20(±V)/VGS(th)1.0-2.5(V)/ID3(A)

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 36 VGS(th)(v) 1.5 RDS(ON)(m?)@4.357V 25 Qg(nC)@4.5V 7 QgS(nC) 1.3 Qgd(nC) 2.4 Ciss(pF) 530 Coss(pF) 65 Crss(pF) 50

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N-channel, 60V, 3A, 85mΩ@10V

Type N Drain-Source Voltage (Vdss) 100 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 4.2 Input Capacitance (Ciss) 4100 Reverse Transfer Capacitance Crss (pF) 13 Gate Charge (Qg) 52