Triode/MOS tube/transistor/module

P channel -20V -2.8A

Configuration Single Type N-Ch VDS(V) 200 VGS(V) 20 ID(A)Max. 9 VGS(th)(v) 1.8 RDS(ON)(m?)@4.405V - Qg(nC)@4.5V - QgS(nC) 2.36 Qgd(nC) 3.98 Ciss(pF) 509 Coss(pF) 51.2 Crss(pF) 3.2

NPN

NPN 40V 600mA silk screen 2X function and pin sequence are the same as the long-term MMBT4401

1200V 38A 1.2KV 38A silicon carbide MOSFET SiC MOS is used in photovoltaic inverters, industrial control, industrial power supplies, electric vehicle charging piles, and energy storage

Gear position: 110-220

PNP, V=-25V, Ic=-800mA, 150-300