Triode/MOS tube/transistor/module

These N-channel logic level MOSFETs are produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications requiring in-line low power loss and fast switching.

N-channel 30V 45A

CSD17505Q5A 30V N-Channel NexFET™ Power MOSFET, Vgs is 20V

N-channel, VDSS withstand voltage 30V, ID current 120A, RDON on-resistance 2.4mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,

Type: P-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 15A Power (Pd): 3.1W On-Resistance (RDS(on)@Vgs,Id): 12mΩ@10V,15A Threshold Voltage (Vgs(th)@Id): 3V@250uA Operating temperature: -55 to+150℃@(Tj)

N-channel, 100V