Triode/MOS tube/transistor/module

Configuration Single Type P-Ch VDS(V) -30 VGS(V) 25 ID(A)Max. -45 VGS(th)(v) -2 RDS(ON)(m?)@4.233V 15 Qg(nC) @4.5V - QgS(nC) 4.3 Qgd(nC) 10 Ciss(pF) 1550 Coss(pF) 315 Crss(pF) 245

This P-channel 1.8V specified MOSFET uses a low-voltage PowerTrench process. This product is ideal for battery management applications.

General materials (low voltage MOSFET power supply, energy storage power supply, etc.) Vds=-30V Id=-14A Rds=12mΩ (16mΩ maximum) SOP-8encapsulation;

P channel -30V -90A, 4.8mΩ on-resistance

N-channel, 75V, 80A, 9mΩ@10V