Triode/MOS tube/transistor/module

N-channel, 500V, 4.5A, 1.3Ω@10V

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This technology is specifically designed to minimize conduction losses, providing superior switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications.

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 82A Power (Pd): 25.5W On-Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 20nC@10V Input Capacitance (Ciss@Vds): 2.82nF@20V , Vds=40V Id=82A Rds=4.5mΩ, Working temperature: -55℃~+150℃@(Tj) DFN5*6encapsulation;

MOS, TO-220, N-channel, 60V, 135A, 3.5mΩ (Max), 180W

P-channel, -20V, -4A, 41mΩ@-4.5V

NPN 25V 500mA 120-400 SOT-23

P-channel, -30V, -4A, 53mΩ@-10V