Triode/MOS tube/transistor/module

NPN, Vceo=32V, Ic=1A, hfe=180~390

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced Power Trench process which incorporates Shielded Gate technology. This process has been optimized to minimize on-resistance while maintaining excellent switching performance with the industry's best soft body diode.

The FDMC7692S is produced using an advanced PowerTrench process, which is especially suited for minimizing on-resistance. This device is suitable for power and load switching applications commonly found in notebook computers and portable battery packs.

N-channel, 60V, 16.8A, 63mΩ@10V