Triode/MOS tube/transistor/module

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 8 VGS(th)(v) 0.75 RDS(ON)(m?)@4.290V 15 Qg(nC)@4.5V 15.6 QgS(nC) 1.3 Qgd(nC) 2.5 Ciss(pF) 520 Coss(pF) 105 Crss(pF) 60

NPN 30W 400V 6A Applications: Igniter applications. · High voltage switch applications.

Semiconductor transistor field effect transistor MOS tube, TO-252, P channel, withstand voltage: -100V, current: -12A, 10V internal resistance (Max): 0.26Ω, 4.5V internal resistance (Max): 0.28Ω, power: 75W

PNP, Vceo=50V, Ic=100mA, hfe=60~100

PNP

N-channel, 60V, 45A, 25mΩ@10V

N channel